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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION *With TO-126 package *DARLINGTON *High DC current gain *Low collector saturation voltage *Complement to type 2SD985 2SD986 APPLICATIONS *For use in operating from IC without predriver ,such as hammer driver PINNING(See Fig.2) PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SB794 2SB795 Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2SB794 VCBO Collector-base voltage 2SB795 2SB794 VCEO Collector-emitter voltage 2SB795 VEBO IC ICM Emitter-base voltage Collector current (DC) Collector current-peak Ta=25 PD Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55~150 Open collector Open base -80 -8 -1.5 -3.0 1.0 W V A A Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SB794 IC=-10mA ;IB=0 2SB795 VCEsat VBEsat Collector-emitter saturation voltage Base-emitter saturation voltage 2SB794 2SB795 IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain IC=-1A ;IB=-1mA IC=-1A ;IB=-1mA VCB=-60V; IE=0 -80 CONDITIONS 2SB794 2SB795 SYMBOL MIN -60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -1.5 -2.0 V V ICBO Collector cut-off current -1.0 VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-2V IC=-1A ; VCE=-2V 1000 2000 30000 -2.0 A mA Switching times ton tstg tf Turn-on time Storage time Fall time IC=-1.0A ; IB1=-IB2=-1.0mA VCC=-50V;RL=50B 0.5 1.0 1.0 s s s hFE-2 Classifications M 2000-5000 L 4000-10000 K 8000-30000 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB794 2SB795 Fig.2 Outline dimensions 3 |
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